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RN1507(TE85L,F)

RN1507(TE85L,F)

RN1507(TE85L,F)

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V

SOT-23

RN1507(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signals
Max Power Dissipation 300mW
Number of Elements 1
Polarity NPN
Element Configuration Dual
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.347215 $0.347215
10 $0.327562 $3.27562
100 $0.309020 $30.902
500 $0.291529 $145.7645
1000 $0.275027 $275.027

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