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RN1707JE(TE85L,F)

RN1707JE(TE85L,F)

RN1707JE(TE85L,F)

Toshiba Semiconductor and Storage

NPN X 2 BRT, Q1BSR=10K?, Q1BER=4

SOT-23

RN1707JE(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-553
Number of Pins 5
Packaging Tape & Reel (TR)
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Number of Elements 2
Power - Max 100mW
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Power Dissipation-Max (Abs) 0.1W
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 47k Ω
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.332210 $0.33221
10 $0.313405 $3.13405
100 $0.295666 $29.5666
500 $0.278930 $139.465
1000 $0.263141 $263.141

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