RN1901FETE85LF

new-10%

Manufacturer part number:RN1901FETE85LF

Manufacturer:Toshiba Semiconductor and Storage

Description:Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V

Case Package:SOT-23

Datasheet:RN1901FETE85LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Transistor Element Material	SILICON
Packaging	Cut Tape (CT)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	100mW
Reach Compliance Code	unknown
Number of Elements	2
Polarity	NPN
Element Configuration	Dual
Transistor Type	2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Emitter Base Voltage (VEBO)	10V
hFE Min	30
Resistor - Base (R1)	4.7k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	4.7k Ω
RoHS Status	RoHS Compliant