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RN1902,LF(CT

RN1902,LF(CT

RN1902,LF(CT

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

SOT-23

RN1902,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Weight 6.010099mg
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Polarity NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 10V
hFE Min 50
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.507002 $0.507002
10 $0.478303 $4.78303
100 $0.451229 $45.1229
500 $0.425689 $212.8445
1000 $0.401592 $401.592

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