RN1902T5LFT

new-10%

Manufacturer part number:RN1902T5LFT

Manufacturer:Toshiba Semiconductor and Storage

Description:Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V

Case Package:SOT-23

Datasheet:RN1902T5LFT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6
Packaging	Cut Tape (CT)
Published	2014
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	200mW
Polarity	NPN
Element Configuration	Dual
Power - Max	200mW
Transistor Type	2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Emitter Base Voltage (VEBO)	10V
hFE Min	50
Resistor - Base (R1)	10kOhms
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	10kOhms
RoHS Status	RoHS Compliant