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RN1906,LF

RN1906,LF

RN1906,LF

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

SOT-23

RN1906,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Power - Max 200mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms
RoHS Status RoHS Compliant

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