RN1963FE(TE85L,F)

new-10%

RN1963FE(TE85L,F)

Manufacturer part number:RN1963FE(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:RN1963FE(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN1963FE(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Transistor Element Material	SILICON
Packaging	Cut Tape (CT)
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	100mW
Number of Elements	2
Polarity	NPN
Element Configuration	Dual
Transistor Type	2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Emitter Base Voltage (VEBO)	10V
hFE Min	70
Resistor - Base (R1)	22k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	22k Ω
RoHS Status	RoHS Compliant