Welcome to Hotenda.com Online Store!

logo
userjoin
Home

RN2101,LF(CT

RN2101,LF(CT

RN2101,LF(CT

Toshiba Semiconductor and Storage

RN2101,LF(CT datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN2101,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Power - Max 100mW
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 4.7 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.087996 $0.087996
500 $0.064703 $32.3515
1000 $0.053919 $53.919
2000 $0.049467 $98.934
5000 $0.046231 $231.155
10000 $0.043005 $430.05
15000 $0.041592 $623.88
50000 $0.040896 $2044.8

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News