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RN2109,LF(CT

RN2109,LF(CT

RN2109,LF(CT

Toshiba Semiconductor and Storage

RN2109,LF(CT datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN2109,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 100mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
Resistor - Base (R1) 47 k Ω
Resistor - Emitter Base (R2) 22 k Ω
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.169071 $0.169071
10 $0.159501 $1.59501
100 $0.150472 $15.0472
500 $0.141955 $70.9775
1000 $0.133920 $133.92

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