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RN2111,LF(CT

RN2111,LF(CT

RN2111,LF(CT

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

SOT-23

RN2111,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Packaging Cut Tape (CT)
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Polarity PNP
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) -50V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -5V
hFE Min 120
Resistor - Base (R1) 10 k Ω
Continuous Collector Current -100mA
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.264397 $0.264397
10 $0.249431 $2.49431
100 $0.235312 $23.5312
500 $0.221993 $110.9965
1000 $0.209427 $209.427

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