RN2113ACT(TPL3)

new-10%

RN2113ACT(TPL3)

Manufacturer part number:RN2113ACT(TPL3)

Manufacturer:Toshiba Semiconductor and Storage

Description:RN2113ACT(TPL3) datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN2113ACT(TPL3) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	100mW
Number of Elements	1
Power - Max	100mW
Polarity/Channel Type	PNP
Transistor Type	PNP - Pre-Biased
Collector Emitter Voltage (VCEO)	150mV
Max Collector Current	80mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	150mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
Resistor - Base (R1)	47 k Ω
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$0.104512	$0.104512
500	$0.076847	$38.4235
1000	$0.064039	$64.039
2000	$0.058752	$117.504
5000	$0.054908	$274.54
10000	$0.051077	$510.77
15000	$0.049397	$740.955
50000	$0.048572	$2428.6