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RN2317(TE85L,F)

RN2317(TE85L,F)

RN2317(TE85L,F)

Toshiba Semiconductor and Storage

Trans Digital BJT PNP 50V 100mA 3-Pin USM T/R

SOT-23

RN2317(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 100mW
Base Part Number RN231*
Polarity PNP
Element Configuration Single
Power Dissipation 100mW
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
hFE Min 30
Resistor - Base (R1) 10 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 4.7 k Ω
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.656494 $0.656494
10 $0.619334 $6.19334
100 $0.584277 $58.4277
500 $0.551205 $275.6025
1000 $0.520005 $520.005

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