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RN2404TE85LF

RN2404TE85LF

RN2404TE85LF

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased BRT PNP Single Ic -100mA -50V VCEO

SOT-23

RN2404TE85LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Reach Compliance Code unknown
Number of Elements 1
Polarity PNP
Element Configuration Dual
Power - Max 200mW
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -10V
hFE Min 80
Resistor - Base (R1) 47 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.877588 $4.877588
10 $4.601499 $46.01499
100 $4.341037 $434.1037
500 $4.095317 $2047.6585
1000 $3.863507 $3863.507

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