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RN2601(TE85L,F)

  • RN2601(TE85L,F)
  • RN2601(TE85L,F)

RN2601(TE85L,F)

RN2601(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SM6

SOT-23

RN2601(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Packaging Tape & Reel (TR)
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Power - Max 300mW
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 4.7k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.451440 $0.45144
10 $0.425886 $4.25886
100 $0.401779 $40.1779
500 $0.379038 $189.519
1000 $0.357582 $357.582

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