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RN4906FE,LF(CT

RN4906FE,LF(CT

RN4906FE,LF(CT

Toshiba Semiconductor and Storage

RN4906FE,LF(CT datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN4906FE,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Weight 3.005049mg
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Polarity NPN, PNP
Number of Channels 2
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.05615 $0.2246

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