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RN4987,LF(CT

RN4987,LF(CT

RN4987,LF(CT

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

SOT-23

RN4987,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Weight 6.010099mg
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Polarity NPN, PNP
Number of Channels 2
Power - Max 200mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Max Breakdown Voltage 50V
Frequency - Transition 250MHz 200MHz
Emitter Base Voltage (VEBO) -6V
hFE Min 80
Resistor - Base (R1) 10kOhms
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47kOhms
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.403549 $0.403549
10 $0.380706 $3.80706
100 $0.359157 $35.9157
500 $0.338827 $169.4135
1000 $0.319648 $319.648

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