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RN4990(TE85L,F)

RN4990(TE85L,F)

RN4990(TE85L,F)

Toshiba Semiconductor and Storage

NPN + PNP BRT, Q1BSR=4.7K?, Q1BE

SOT-23

RN4990(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Number of Elements 2
Power - Max 200mW
Polarity/Channel Type NPN/PNP
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz 200MHz
Power Dissipation-Max (Abs) 0.2W
Resistor - Base (R1) 4.7k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.336165 $0.336165
10 $0.317137 $3.17137
100 $0.299186 $29.9186
500 $0.282251 $141.1255
1000 $0.266274 $266.274

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