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SSM3K123TU,LF

SSM3K123TU,LF

SSM3K123TU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 4.2A UFM

SOT-23

SSM3K123TU,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSIII
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 500mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 3A, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Gate Charge (Qg) (Max) @ Vgs 13.6nC @ 4V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
Vgs (Max) ±10V
Continuous Drain Current (ID) 4.2A
Gate to Source Voltage (Vgs) 10V
DS Breakdown Voltage-Min 20V
Height 700μm
Length 2mm
Width 1.7mm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.13200 $0.396
6,000 $0.12400 $0.744
15,000 $0.11600 $1.74
30,000 $0.11200 $3.36

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