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IRF6811STRPBF

IRF6811STRPBF

IRF6811STRPBF

Infineon Technologies

IRF6811STRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF6811STRPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SQ
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
JESD-609 Code e1
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 3.7MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XBCC-N2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.1W Ta 32W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 8.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2.1V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds 1590pF @ 13V
Current - Continuous Drain (Id) @ 25°C 19A Ta 74A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 74A
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 32 mJ
Max Junction Temperature (Tj) 150°C
Height 700μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.626815 $0.626815
10 $0.591335 $5.91335
100 $0.557863 $55.7863
500 $0.526286 $263.143
1000 $0.496496 $496.496
IRF6811STRPBF Product Details

IRF6811STRPBF Description

The IRF6811STRPbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET? packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET? package is compatible with

existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET? package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.


IRF6811STRPBF Features

RoHS Compliant and Halogen Free

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for Control FET Application

Compatible with existing Surface Mount Techniques

100% Rg tested

Footprint compatible to DirectFET


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