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SSM3K345R,LF

SSM3K345R,LF

SSM3K345R,LF

Toshiba Semiconductor and Storage

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 33m Ω @ 4A, 4.5V ±8V 410pF @ 10V 3.6nC @ 4.5V 20V SOT-23-3 Flat Leads

SOT-23

SSM3K345R,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series U-MOSVI
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 33m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.033Ohm
DS Breakdown Voltage-Min 20V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.09000 $0.27
6,000 $0.08500 $0.51
15,000 $0.07750 $1.1625
30,000 $0.07250 $2.175
75,000 $0.07000 $5.25
SSM3K345R,LF Product Details

SSM3K345R,LF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 410pF @ 10V.The drain current is the maximum continuous current this device can conduct, which is 4A.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.5V 4.5V volts (1.5V 4.5V).

SSM3K345R,LF Features


a 20V drain to source voltage (Vdss)


SSM3K345R,LF Applications


There are a lot of Toshiba Semiconductor and Storage
SSM3K345R,LF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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