STL18N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STL18N65M5 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™ V
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
240mOhm
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Base Part Number
STL18
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Number of Channels
2
Power Dissipation-Max
57W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
57W
Case Connection
DRAIN
Turn On Delay Time
36 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
240m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1240pF @ 100V
Current - Continuous Drain (Id) @ 25°C
15A Tc
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Rise Time
7ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
9 ns
Continuous Drain Current (ID)
15A
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
650V
Pulsed Drain Current-Max (IDM)
60A
Height
1mm
Length
5.4mm
Width
6.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STL18N65M5 Product Details
STL18N65M5 Description
The STL18N65M5 is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The STMicroelectronics STL18N65M5 offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. What's more, the STL18N65M5 operates within ambient temperatures from -55 to 150°C and with power dissipation 57W.
STL18N65M5 Features
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
In PowerFLAT-5x6-8 package
STL18N65M5 Applications
communication devices
band selectors in multi-band radios
DIP Switch
Telecommunication,
Computer motherboards
Remote controls for frequency settings and other electronic devices that requires option settings