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SSM6H19NU,LF

SSM6H19NU,LF

SSM6H19NU,LF

Toshiba Semiconductor and Storage

MOSFET UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz

SOT-23

SSM6H19NU,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6
Supplier Device Package 6-UDFN (2x2)
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Series U-MOSVII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 1W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 185mOhm @ 1A, 8V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 130pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.2V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 8V
Vgs (Max) ±12V
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 3.6V
Input Capacitance 130pF
Drain to Source Resistance 160mOhm
Rds On Max 185 mΩ
Height 750μm
Length 2mm
Width 2mm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.734992 $0.734992
10 $0.693389 $6.93389
100 $0.654141 $65.4141
500 $0.617114 $308.557
1000 $0.582183 $582.183

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