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R5007ANX

R5007ANX

R5007ANX

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel Bulk 1.05 Ω @ 3.5A, 10V ±30V 500pF @ 25V 13nC @ 10V 500V TO-220-3 Full Pack

SOT-23

R5007ANX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2010
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.05 Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 7A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 7A
Pulsed Drain Current-Max (IDM) 28A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 3.5 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.25000 $1.25
10 $1.12100 $11.21
100 $0.87400 $87.4
500 $0.72200 $361
1,000 $0.57000 $0.57
2,500 $0.53200 $1.064
R5007ANX Product Details

R5007ANX Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3.5 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 500pF @ 25V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 7A.A maximum pulsed drain current of 28A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

R5007ANX Features


the avalanche energy rating (Eas) is 3.5 mJ
a continuous drain current (ID) of 7A
based on its rated peak drain current 28A.
a 500V drain to source voltage (Vdss)


R5007ANX Applications


There are a lot of ROHM Semiconductor
R5007ANX applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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