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SSM6N7002BFE,LM

SSM6N7002BFE,LM

SSM6N7002BFE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A ES6

SOT-23

SSM6N7002BFE,LM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Number of Channels 2
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 2.1 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 17pF @ 25V
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 60V
FET Feature Logic Level Gate
Height 550μm
Length 1.6mm
Width 1.2mm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.093342 $0.093342
500 $0.068634 $34.317
1000 $0.057195 $57.195
2000 $0.052472 $104.944
5000 $0.049040 $245.2
10000 $0.045619 $456.19
15000 $0.044118 $661.77
50000 $0.043381 $2169.05

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