FDMC7200S          Description

The device includes two dedicated N-channel MOSFET with a package power of 33 (3 Mm X 3 Mm MLP). The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous MOSFET (Q2) are designed to provide optimal power efficiency.

FDMC7200S             Features

Q1: N-Channel

Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A

Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5 A

Q2: N-Channel

Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A

Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A

RoHS Compliant

FDMC7200S              Applications

Notebook PC