PSMN026-80YS,115

new-10%

Manufacturer part number:PSMN026-80YS,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 80V 34A LFPAK

Case Package:SOT-23

Datasheet:PSMN026-80YS,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Number of Pins	4
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Digi-Reel®
Published	2009
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	27.5MOhm
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	74W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	74W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27.5m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 40V
Current - Continuous Drain (Id) @ 25°C	34A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	6ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	34A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	80V
Drain to Source Breakdown Voltage	80V
Avalanche Energy Rating (Eas)	32 mJ
Height	6.35mm
Length	6.35mm
Width	6.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free