TK10A60D(STA4,Q,M)

new-10%

Manufacturer part number:TK10A60D(STA4,Q,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 600V 10A TO220SIS

Case Package:SOT-23

Datasheet:TK10A60D(STA4,Q,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Supplier Device Package	TO-220SIS
Operating Temperature	150°C TJ
Packaging	Tube
Published	2009
Series	π-MOSVII
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	45W Tc
Element Configuration	Single
Power Dissipation	45W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	55ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Input Capacitance	1.35nF
Drain to Source Resistance	750mOhm
Rds On Max	750 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free