TK10J80E,S1E

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Manufacturer part number:TK10J80E,S1E

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN

Case Package:SOT-23

Datasheet:TK10J80E,S1E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)
Weight	6.961991g
Operating Temperature	150°C TJ
Packaging	Tube
Published	2014
Series	π-MOSVIII
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Turn On Delay Time	80 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Rise Time	40ns
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	140 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	30V
Input Capacitance	2nF
Drain to Source Resistance	700mOhm
Rds On Max	1 Ω
RoHS Status	RoHS Compliant