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TK12A50E,S5X

  • TK12A50E,S5X
  • TK12A50E,S5X

TK12A50E,S5X

TK12A50E,S5X

Toshiba Semiconductor and Storage

MOSFET (Metal Oxide) N-Channel Tube 520m Ω @ 6A, 10V ±30V 1300pF @ 25V 40nC @ 10V 500V TO-220-3 Full Pack

SOT-23

TK12A50E,S5X Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature 150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 45W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 520m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 1.2mA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.97000 $1.97
50 $1.59260 $79.63
100 $1.43330 $143.33
500 $1.11476 $557.38
1,000 $0.92365 $0.92365
2,500 $0.89180 $1.7836
TK12A50E,S5X Product Details

TK12A50E,S5X Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1300pF @ 25V maximal input capacitance.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

TK12A50E,S5X Features


a 500V drain to source voltage (Vdss)


TK12A50E,S5X Applications


There are a lot of Toshiba Semiconductor and Storage
TK12A50E,S5X applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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