IRF2907ZLPBF

new-10%

Manufacturer part number:IRF2907ZLPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 75V 75A TO262

Case Package:SOT-23

Datasheet:IRF2907ZLPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	300W Tc
Element Configuration	Single
Power Dissipation	300W
Turn On Delay Time	19 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	160A Tc
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Rise Time	140ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	97 ns
Continuous Drain Current (ID)	170A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	75V
Dual Supply Voltage	75V
Nominal Vgs	4 V
Height	9.652mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant