TK12E60W,S1VX

new-10%

Manufacturer part number:TK12E60W,S1VX

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC

Case Package:SOT-23

Datasheet:TK12E60W,S1VX Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	150°C TJ
Packaging	Tube
Published	2013
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	110W Tc
Element Configuration	Single
Power Dissipation	110W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	300m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id	3.7V @ 600μA
Input Capacitance (Ciss) (Max) @ Vds	890pF @ 300V
Current - Continuous Drain (Id) @ 25°C	11.5A Ta
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	5.5 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	11.5A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
FET Feature	Super Junction
Radiation Hardening	No
RoHS Status	RoHS Compliant