RYC002N05T316

new-10%

Manufacturer part number:RYC002N05T316

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CHANNEL 50V 200MA SST3

Case Package:SOT-23

Datasheet:RYC002N05T316 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2011
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	350mW Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.2 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id	800mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	26pF @ 10V
Current - Continuous Drain (Id) @ 25°C	200mA Ta
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On,Min Rds On)	4.5V
Vgs (Max)	±8V
Continuous Drain Current (ID)	200mA
Drain Current-Max (Abs) (ID)	0.2A
Drain-source On Resistance-Max	2.8Ohm
DS Breakdown Voltage-Min	50V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free