TK20G60W,RVQ

new-10%

Manufacturer part number:TK20G60W,RVQ

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A

Case Package:SOT-23

Datasheet:TK20G60W,RVQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	3.949996g
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	165W Tc
Element Configuration	Single
Turn On Delay Time	50 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	155m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3.7V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1680pF @ 300V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
FET Feature	Super Junction
Radiation Hardening	No
RoHS Status	RoHS Compliant