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TK4A55DA(STA4,Q,M)

TK4A55DA(STA4,Q,M)

TK4A55DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 3.5A TO-220SIS

SOT-23

TK4A55DA(STA4,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS
Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.45Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 550V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 380pF
Rds On Max 2.45 Ω
Radiation Hardening No
RoHS Status RoHS Compliant

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