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TK4A60D(STA4,Q,M)

TK4A60D(STA4,Q,M)

TK4A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 4A TO-220SIS

SOT-23

TK4A60D(STA4,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 35W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.602202 $3.602202
10 $3.398303 $33.98303
100 $3.205947 $320.5947
500 $3.024478 $1512.239
1000 $2.853281 $2853.281

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