IRL520NS Description

International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. The is a surface mount power package that can handle die sizes up to HEX-4. It has the highest power capabilities and the lowest on-resistance of any surface mount package currently available. Because of its low internal connection resistance, the D2Pak is appropriate for high current applications and can dissipate in a conventional surface mount application. For low-profile applications, the through-hole variant (IRL520NL) is offered.

IRL520NS Features

• Type Designator: IRL520NS

• Type of Transistor: MOSFET

• Type of Control Channel: N -Channel

• Maximum Power Dissipation (Pd): 48 W

• Maximum Drain-Source Voltage |Vds|: 100 V

• Maximum Gate-Source Voltage |Vgs|: 16 V

• Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

• Maximum Drain Current |Id|: 10 A

• Maximum Junction Temperature (Tj): 150 °C

• Total Gate Charge (Qg): 13.3 nC

• Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

IRL520NS Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial