TK4A60DB(STA4,Q,M)

new-10%

Manufacturer part number:TK4A60DB(STA4,Q,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 600V 3.7A TO-220SIS

Case Package:SOT-23

Datasheet:TK4A60DB(STA4,Q,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Tube
Published	2010
Series	π-MOSVII
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	35W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2 Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id	4.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.7A Ta
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Rise Time	18ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8 ns
Continuous Drain Current (ID)	3.7A
Gate to Source Voltage (Vgs)	30V
Radiation Hardening	No
RoHS Status	RoHS Compliant