STD10NM65N

new-10%

Manufacturer part number:STD10NM65N

Manufacturer:STMicroelectronics

Description:STD10NM65N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STD10NM65N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	480mOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STD10
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	90W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	90W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	480m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 50V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	9A
Threshold Voltage	3V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	25V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	650V
Height	2.4mm
Length	6.6mm
Width	6.2mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free