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TK5A60D(STA4,Q,M)

TK5A60D(STA4,Q,M)

TK5A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 5A TO-220SIS

SOT-23

TK5A60D(STA4,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Published 2010
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 35W Tc
Element Configuration Single
Power Dissipation 35W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.43 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.438252 $0.438252
10 $0.413445 $4.13445
100 $0.390043 $39.0043
500 $0.367965 $183.9825
1000 $0.347137 $347.137

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