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TK62N60W,S1VF

TK62N60W,S1VF

TK62N60W,S1VF

Toshiba Semiconductor and Storage

MOSFET (Metal Oxide) N-Channel Tube 40m Ω @ 30.9A, 10V ±30V 6500pF @ 300V 180nC @ 10V TO-247-3

SOT-23

TK62N60W,S1VF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature 150°C TJ
Packaging Tube
Series DTMOSIV
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 400W Tc
Element Configuration Single
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 30.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 3.1mA
Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 300V
Current - Continuous Drain (Id) @ 25°C 61.8A Ta
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 58ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 310 ns
Continuous Drain Current (ID) 61.8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
FET Feature Super Junction
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.030000 $13.03
10 $12.292453 $122.92453
100 $11.596654 $1159.6654
500 $10.940239 $5470.1195
1000 $10.320980 $10320.98
TK62N60W,S1VF Product Details

TK62N60W,S1VF Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6500pF @ 300V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 61.8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 310 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

TK62N60W,S1VF Features


a continuous drain current (ID) of 61.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 310 ns


TK62N60W,S1VF Applications


There are a lot of Toshiba Semiconductor and Storage
TK62N60W,S1VF applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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