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TK6A80E,S4X

TK6A80E,S4X

TK6A80E,S4X

Toshiba Semiconductor and Storage

MOSFET (Metal Oxide) N-Channel Tube 1.7 Ω @ 3A, 10V ±30V 1350pF @ 25V 32nC @ 10V 800V TO-220-3 Full Pack

SOT-23

TK6A80E,S4X Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Weight 6.000006g
Operating Temperature 150°C TJ
Packaging Tube
Series π-MOSVIII
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Turn On Delay Time 55 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 600μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 30V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.487000 $1.487
10 $1.402830 $14.0283
100 $1.323425 $132.3425
500 $1.248514 $624.257
1000 $1.177843 $1177.843
TK6A80E,S4X Product Details

TK6A80E,S4X Overview


A device's maximal input capacitance is 1350pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 85 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 55 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

TK6A80E,S4X Features


a continuous drain current (ID) of 6A
the turn-off delay time is 85 ns
a 800V drain to source voltage (Vdss)


TK6A80E,S4X Applications


There are a lot of Toshiba Semiconductor and Storage
TK6A80E,S4X applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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