TK7Q60W,S1VQ

new-10%

Manufacturer part number:TK7Q60W,S1VQ

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-Ch DTMOSIV 600 V 60W 490pF 15nC 7A

Case Package:SOT-23

Datasheet:TK7Q60W,S1VQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Number of Pins	3
Supplier Device Package	I-PAK
Weight	3.949996g
Operating Temperature	150°C TJ
Packaging	Tube
Published	2014
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	60W Tc
Element Configuration	Single
Turn On Delay Time	40 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	3.7V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 300V
Current - Continuous Drain (Id) @ 25°C	7A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	18ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	7A
Gate to Source Voltage (Vgs)	30V
Input Capacitance	490pF
Drain to Source Resistance	500mOhm
Rds On Max	600 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant