BSB013NE2LXIXUMA1

new-10%

Manufacturer part number:BSB013NE2LXIXUMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 163A WDSON-2

Case Package:SOT-23

Datasheet:BSB013NE2LXIXUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Contact Plating	Silver
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-WDSON
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-MBCC-N3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 57W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.8W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4400pF @ 12V
Current - Continuous Drain (Id) @ 25°C	36A Ta 163A Tc
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Rise Time	6.4ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	36A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	25V
RoHS Status	ROHS3 Compliant