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TK80S04K3L(T6L1,NQ

TK80S04K3L(T6L1,NQ

TK80S04K3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 80A DPAK-3

SOT-23

TK80S04K3L(T6L1,NQ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package DPAK+
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series U-MOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 100W Tc
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.1mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Ta
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 80 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 4.34nF
Rds On Max 3.1 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.701216 $2.701216
10 $2.548317 $25.48317
100 $2.404073 $240.4073
500 $2.267993 $1133.9965
1000 $2.139616 $2139.616

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