TPC6006-H(TE85L,F)

new-10%

Manufacturer part number:TPC6006-H(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 40V 3.9A VS6 2-3T1A

Case Package:SOT-23

Datasheet:TPC6006-H(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	U-MOSIII-H
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	unknown
Number of Elements	1
Power Dissipation-Max	700mW Ta
Power Dissipation	2.2W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	75m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	251pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.9A Ta
Gate Charge (Qg) (Max) @ Vgs	4.4nC @ 10V
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Continuous Drain Current (ID)	3.9A
Threshold Voltage	2.3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Dual Supply Voltage	40V
Nominal Vgs	2.3 V
Height	700μm
Length	2.9mm
Width	1.6mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant