TPC8018-H(TE12LQM)

new-10%

Manufacturer part number:TPC8018-H(TE12LQM)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 30V 18A SOP8 2-6J1B

Case Package:SOT-23

Datasheet:TPC8018-H(TE12LQM) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.173, 4.40mm Width)
Number of Pins	8
Supplier Device Package	8-SOP (5.5x6.0)
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1W Ta
Power Dissipation	1.9W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.6mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2265pF @ 10V
Current - Continuous Drain (Id) @ 25°C	18A Ta
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	5ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	2.265nF
Drain to Source Resistance	4.6mOhm
Rds On Max	4.6 mΩ
RoHS Status	RoHS Compliant