NTB90N02G

new-10%

Manufacturer part number:NTB90N02G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 24V 90A D2PAK

Case Package:SOT-23

Datasheet:NTB90N02G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	24V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	90A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	85W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	85W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.8m Ω @ 90A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2120pF @ 20V
Current - Continuous Drain (Id) @ 25°C	90A Ta
Gate Charge (Qg) (Max) @ Vgs	29nC @ 4.5V
Rise Time	90ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	90A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0058Ohm
Drain to Source Breakdown Voltage	24V
Pulsed Drain Current-Max (IDM)	200A
Avalanche Energy Rating (Eas)	733 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free