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TPC8051-H(TE12L,Q)

TPC8051-H(TE12L,Q)

TPC8051-H(TE12L,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 13A 8-SOP

SOT-23

TPC8051-H(TE12L,Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173, 4.40mm Width)
Number of Pins 8
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.7m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7540pF @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Rise Time 3.4ns
Drain to Source Voltage (Vdss) 80V
Fall Time (Typ) 6.7 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Radiation Hardening No
RoHS Status RoHS Compliant

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