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TPC8110(TE12L,Q,M)

TPC8110(TE12L,Q,M)

TPC8110(TE12L,Q,M)

Toshiba Semiconductor and Storage

Trans MOSFET P-CH 40V 8A 8-Pin SOP T/R

SOT-23

TPC8110(TE12L,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173, 4.40mm Width)
Supplier Device Package 8-SOP (5.5x6.0)
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series U-MOSIII
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V

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