SI9435DY datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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SI9435DY Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package
8-SOIC
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
50mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
690pF @ 15V
Current - Continuous Drain (Id) @ 25°C
5.3A Ta
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
SI9435DY Product Details
SI9435DY Description
SI9435DY is a -30v P-Channel Logic Level PowerTrench MOSFET. The P-Channel Logic Level MOSFET SI9435DY is produced using Fairchild Semiconductor's advanced PowerTrench process that has been specially tailored to minimize on-state resistance and yet maintain superior switching performance. The onsemi SI9435DY is well suited for low voltage and battery-powered applications where low in-line power loss and fast switching are required.
SI9435DY Features
-5.3 A, -30V
RDS(ON) = 50Ω @ VGS= -10 V
RDS(ON) = 80Ω @ VGS= -4.5V
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS(ON)